HM4884A
Dual N-Channel Enhancement Mode Power MOSFET
Description
The HM4884A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =40V,ID =15A RDS(ON) <13mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized avalanch...
