DatasheetsPDF.com

R6007JNX

INCHANGE
Part Number R6007JNX
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Jan 20, 2021
Detailed Description isc N-Channel MOSFET Transistor R6007JNX FEATURES ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min...
Datasheet PDF File R6007JNX PDF File

R6007JNX
R6007JNX

Overview
isc N-Channel MOSFET Transistor R6007JNX FEATURES ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 780mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 46 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.
7 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spec...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)