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IRFR4615

International Rectifier
Part Number IRFR4615
Manufacturer International Rectifier
Description Power MOSFETs
Published Apr 8, 2021
Detailed Description Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Sw...
Datasheet PDF File IRFR4615 PDF File

IRFR4615
IRFR4615


Overview
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching G l Hard Switched and High Frequency Circuits IRFR4615PbF IRFU4615PbF HEXFET® Power MOSFET D VDSS 150V RDS(on) typ.
34m: max.
42m: S ID 33A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D D S G DPak IRFR4615PbF S D G IPAK IRFU4615PbF G Gate D Drain S Source Base Part Number IRFR4615PbF IRFR4615TRLPbF IRFU4615PbF Package Type D-PAK I-PAK Standard Pack Form Tube/Bulk Tape and Reel Left Tube/Bulk Quantity 75 3000 75 Orderable Part Number IRFR4615PbF IRFR4615TRLPbF IRFU4615PbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM c Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage e Peak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Avalanche Characteristics d EAS (Thermally limited) Single Pulse Avalanche Energy c IAR Avalanche Current c EAR Repetitive Avalanche Energy Thermal Resistance Symbol RθJC RθJA Parameter j Junction-to-Case i Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient Notes  through ˆ are on page 11 Max.
33 24 140 144 0.
96 ± 20 38 -55 to + 175 300 109 See Fig.
14, 15, 22a, 22b, Typ.
––– ––– ––– Max.
1.
045 50 110 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 www.
irf.
com © 2013 International Rectifier May 16, 2013 IRFR/U4615PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source...


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