GaN HEMT
Description
CGHV96050F2
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Description
Wolfspeed’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compar...
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