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C3306

Silicon NPN Power Transistor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3306 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC ...

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