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120M1045

1200V SiC Trench MOSFET

Description

IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state characteristic  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage  Fully controllable dv/dt  Commutation robust body diode, ready for synchronous recti...

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120M1045 1200V SiC Trench MOSFET - Infineon

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