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SW160R02VT

Samwin
Part Number SW160R02VT
Manufacturer Samwin
Description N-channel MOSFET
Published Aug 7, 2022
Detailed Description SW160R02VT Features N-channel Enhanced mode DFN3*3 MOSFET  High ruggedness  Low RDS(ON) (Typ 12.3mΩ)@VGS=2.5V (Typ ...
Datasheet PDF File SW160R02VT PDF File

SW160R02VT
SW160R02VT

Overview
SW160R02VT Features N-channel Enhanced mode DFN3*3 MOSFET  High ruggedness  Low RDS(ON) (Typ 12.
3mΩ)@VGS=2.
5V (Typ 9.
4mΩ)@VGS=4.
5V  Low Gate Charge (Typ 15.
4nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:DC-DC Converter, Inverter, Synchronous Rectification DFN3*3 1 8 2 7 3 6 4 5 BVDSS : 20V ID : 16A RDS(ON) : 12.
3mΩ@VGS=2.
5V 9.
4mΩ@VGS=4.
5V D DFN3*3: 4.
Gate 5,6,7,8.
Drain 1,2,3.
Source G General Description S This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Order Codes Item Sales Type Marking Package Packaging 1 SW H 160R02VT SW160R02V DFN3*3 REEL Absolute maximum ratings Symbol Parameter Value Unit VDSS ID IDM VGS dv/dt Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Peak diode recovery dv/dt (note 1) (note 3) 20 16* 10* 64 ±10 5 V A A A V V/ns Total power dissipation (@TC=25oC) PD Derating factor above 25oC 2.
97 0.
02 W W/oC TSTG, TJ Operating junction temperature & storage temperature -55 ~ + 150 oC *.
Drain current is limited by junction temperature.
Thermal characteristics Symbol Parameter Rthja Thermal resistance, Junction to ambient Value 42 Unit oC/W Note: Rthja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d efined as the solder mounting surface of the drain pins.
Rthjc is guaranteed by design while Rthca is determined by the user's board design.
42oC/W on a 1 in2 pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co.
, Ltd.
All rights reserved.
Apr.
2019.
Rev.
3.
0 1/6 SW160R02VT Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Off characteristics BVDS...


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