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STG50M120F3D7

STMicroelectronics

IGBT


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STG50M120F3D7 Datasheet Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing C G Features Maximum junction temperature: TJ = 175 °C 10 μs of short-circuit withstand time Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A Tight parameter distribution Positive VCE(sat) temperature coefficient Applications E Industrial motor contro...



STMicroelectronics

STG50M120F3D7

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