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2SJ668

Toshiba
Part Number 2SJ668
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Dec 13, 2023
Detailed Description 2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Mo...
Datasheet PDF File 2SJ668 PDF File

2SJ668
2SJ668

Overview
2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.
12 Ω (typ.
) z High forward transfer admittance: |Yfs| = 5.
0 S (typ.
) z Low leakage current: IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 1.
5 ± 0.
2 6.
5 ± 0.
2 5.
2 ± 0.
2 Unit: mm 0.
6 MAX.
5.
5 ± 0.
2 9.
5 ± 0.
3 1.
2 MAX.
0.
8 MAX.
0.
6 ± 0.
15 1 1.
05 MAX.
23 1.
1 ± 0.
2 0.
6 MAX.
2.
3 ± 0.
2 0.
1 ± 0.
1 Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-so...


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