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TK33S10N1H

Toshiba
Part Number TK33S10N1H
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jan 2, 2024
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TK33S10N1H 1. Applications • Switching Voltage Regulators • Motor Drivers 2. Fe...
Datasheet PDF File TK33S10N1H PDF File

TK33S10N1H
TK33S10N1H

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TK33S10N1H 1.
Applications • Switching Voltage Regulators • Motor Drivers 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 8.
2 mΩ (typ.
) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 0.
5 mA) 3.
Packaging and Internal Circuit TK33S10N1H 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Channel...


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