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TPCP8604

Part Number	TPCP8604
Manufacturer	Toshiba
Description	Silicon PNP Transistor
Published	Jan 30, 2024
Detailed Description	TOSHIBA Transistor Silicon PNP Diffused Type TPCP8604 TPCP8604 High-Voltage Switching Applications High breakdown volt...
Datasheet	TPCP8604 PDF File

Overview

TOSHIBA Transistor Silicon PNP Diffused Type TPCP8604 TPCP8604 High-Voltage Switching Applications High breakdown voltage: VCEO = −400 V Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −400 V Collector-emitter voltage VCEO −400 V Emitter-base voltage VEBO −7 V Collector current DC (Note 1) IC Pulse(Note 1) ICP −0.
3 A −1 Base current IB −0.
25 A Collector power dissipation t=10s −2.
2 PC (Note 2) W DC −1.
1 Junction temperature Tj −150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Ensure that the junction temperature does not exceed 150°C.
Note 2: Device mounted on a 25.
4mm x 25.
4...

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