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HYB314400BJ-50

Siemens Semiconductor Group
Part Number HYB314400BJ-50
Manufacturer Siemens Semiconductor Group
Description 1M x 4-Bit Dynamic RAM
Published Mar 26, 2005
Detailed Description 1M × 4-Bit Dynamic RAM HYB 314400BJ-50/-60 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 °C o...
Datasheet PDF File HYB314400BJ-50 PDF File

HYB314400BJ-50
HYB314400BJ-50

Overview
1M × 4-Bit Dynamic RAM HYB 314400BJ-50/-60 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 60 15 30 110 40 ns ns ns ns ns tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 95 35 • Fast access and cycle time Single + 3.
3 V (± 0.
3 V) supply with a built-in VBB generator • Low power dissipation max.
252 mW active (-50 version) max.
216 mW active (-60 version) • Standby power dissipation: 7.
2 mW max.
standby (LVTTL) 3.
6 mW max.
standby (LVCMOS) • Output unlatched at cycle end allows two-dimensional chip selec...


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