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BAV170

Part Number	BAV170
Manufacturer	NXP
Description	Low-leakage double diode
Published	Mar 26, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV170 Low-leakage double diode Product data sheet Supersedes ...
Datasheet	BAV170 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV170 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2003 Mar 25 NXP Semiconductors Low-leakage double diode Product data sheet BAV170 FEATURES • Plastic SMD package • Low leakage current: typ.
3 pA • Switching time: typ.
0.
8 µs • Continuous reverse voltage: max.
75 V • Repetitive peak reverse voltage: max.
85 V • Repetitive peak forward current: max.
500 mA.
DESCRIPTION Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package.
The diodes are in common cathode configuration.
PINNING PIN 1 2 3 DESCRIPTION anode anode common cathode APPLICATION • Low-leakage current applic...

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