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AM83135-001

STMicroelectronics
Part Number AM83135-001
Manufacturer STMicroelectronics
Description RF & MICROWAVE TRANSISTORS
Published Mar 26, 2005
Detailed Description AM83135-001 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALL IZATION EMITTE...
Datasheet PDF File AM83135-001 PDF File

AM83135-001
AM83135-001

Overview
AM83135-001 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .
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REFRACTORY/GOLD METALL IZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 1.
0 W MIN.
WITH 5.
2 dB GAIN .
400 x .
400 2NLF L (S042) hermetically sealed O RDER CODE AM83135-001 BRANDING 83135-1 DESCRIPTION The AM83135-001 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 10:1 output VSWR.
Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency.
The AM83135-001 is supplied int the AMPAC™ Hermet ic/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability apABSOLUTE MAXIMUM RATINGS (T case = 25°C) Symbol Parameter PIN CONNECTION 1.
Collector 2.
Base 3.
Emitter 4.
Base Value Un it PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤100 °C) 11.
5 0.
45 34 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA Junction-Case Thermal Resistance* RTH(j-c) *Applies only to rated RF amplifier operation 13.
0 °C/W February 3, 1997 1/5 AM83135-001 ELECTRICAL SPECIFICATIONS (T case = 25° C) STATIC Symb ol Test Con ditio ns Value Min.
T yp.
Max.
Unit BVCBO BVEBO BVCER ICES hFE IC = 1mA IE = 1mA IC = 1mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω VCE = 30V IC = 100mA 45 3.
5 45 — 10 — — — — — — — — 1 — V V V mA — DYNAMIC Symb ol T est Co nditi ons Value Min.
Typ .
Max.
Un it POUT ηc GP Note: = 3.
1 — 3.
5GHz f = 3.
1 — 3.
5GHz f = 3.
1 — 3.
5GHz f = = 100 10% PIN = 0.
3W PIN = 0.
3W PIN = 0.
3W VCC = 30V VCC = 30V VCC = 30V 1.
0 27 5.
2 1.
4 35 6.
7 — — — ...


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