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AM83135-030

STMicroelectronics
Part Number AM83135-030
Manufacturer STMicroelectronics
Description RF & MICROWAVE TRANSISTORS
Published Mar 26, 2005
Detailed Description AM83135-030 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METAL...
Datasheet PDF File AM83135-030 PDF File

AM83135-030
AM83135-030

Overview
AM83135-030 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .
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PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN.
WITH 5.
5 dB GAIN .
310 x .
310 2LFL (S064) hermetically sealed ORDER CODE AM83135-030 BRANDING AM83135-30 DESCRIPTION The AM83135-030 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This device is characterized at 100µsec pulse width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles, and temperatures, and withstand a 3:1 output VSWR with a + 1 dB input overdrive.
Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).
The AM83135-030 is supplied in the IMPAC™ Hermetic Metal/...


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