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MIP301

Panasonic Semiconductor
Part Number MIP301
Manufacturer Panasonic Semiconductor
Description Silicon MOS IC
Published Mar 26, 2005
Detailed Description Intelligent Power Devices (IPDs) MIP301 Silicon MOS IC s Features q 100V high breakdown voltage MOS FET and CMOS contro...
Datasheet PDF File MIP301 PDF File

MIP301
MIP301

Overview
Intelligent Power Devices (IPDs) MIP301 Silicon MOS IC s Features q 100V high breakdown voltage MOS FET and CMOS control circuits are integrated into one chip q 5V and 3 - 5W output with 24VDC input (Flyback method) unit: mm 0.
6±0.
3 0.
4±0.
25 1 2 3 4 8 5.
0±0.
3 1.
5±0.
2 4.
2±0.
3 6.
5±0.
3 7 6 5 s Applications 1.
27 0.
1±0.
1 0.
3 q IPD for DC/DC converter s Absolute Maximum Ratings (Ta = 25 ± 3°C) Parameter Drain voltage Control voltage Input voltage Output current Control current Channel temperature Storage temperature Symbol VD VC VIN ID IC Tch Tstg Ratings 90 8 30 1.
1 0.
1 150 −55 to +150 Unit V V V A A °C °C 1: VIN 5: Drain 2: Source 6: Source 3: Source 7: Source 4: Control 8: Source SO-8P Ty...


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