2SJ361
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source
Outline
UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S
3
G
2SJ361
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source vo...
