2SJ363
Silicon P-Channel MOS FET
Application
Low frequency power switching
Features
Low on-resistance Low drive current 4 V gate drive device can be driven from 5 V source
Outline
UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S
3
G
2SJ363
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Dr...
