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2SJ378

Toshiba Semiconductor
Part Number 2SJ378
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ378 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ378 Relay Drive, DC−DC Converter and M...
Datasheet PDF File 2SJ378 PDF File

2SJ378
2SJ378


Overview
2SJ378 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.
16 Ω (typ.
) z High forward transfer admittance : |Yfs| = 4.
0 S (typ.
) z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mode : Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse(Note 1) Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Rep...



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