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2SK2912

Silicon N Channel MOS FET

Description

2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st. Edition Features Low on-resistance R DS = 15 mΩ typ. High speed switching 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°...

Hitachi Semiconductor

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