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2SK2961

Toshiba Semiconductor
Part Number 2SK2961
Manufacturer Toshiba Semiconductor
Description Silicon N Channel MOS Type Field Effect Transistor
Published Mar 30, 2005
Detailed Description 2SK2961 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2961 Relay Drive, Motor Drive and DC−...
Datasheet PDF File 2SK2961 PDF File

2SK2961
2SK2961

Overview
2SK2961 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.
2 Ω (typ.
) z High forward transfer admittance : |Yfs| = 2.
0 S (typ.
) z Low leakage current : IDSS = 100 μA (VDS = 60 V) z Enhancement mode : Vth = 0.
8~2.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD Tch Tstg 60 60 ±20 ...


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