Silicon N-Channel Power F-MOS FET
Description
Power F-MOS FETs
2SK3026 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage
unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
13.7–0.2
q Contactless relay q Diving c...
Panasonic Semiconductor
2SK3026 PDF File
Similar Datasheet