N-Channel MOSFET
Description
2SK3082(L),2SK3082(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-637 (Z) 2nd. Edition May 1998 Features Low on-resistance RDS(on) = 0.055 Ω typ. High speed switching 4V gate drive device can be driven from 5V source Outline
LDPAK
4 4
1 1
2
3
2
3
1. Gate 2. Drain 3. Source 4. Drain
2SK3082(L),2SK3082(S)
Absolute Maximum Ratings...
Hitachi Semiconductor
2SK3082 PDF File
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