N-Channel MOSFET
Description
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK330
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
2SK330
Unit: mm
High breakdown voltage: VGDS = −50 V High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Low RDS (ON): RDS (ON) = 320 Ω (typ.) (IDSS = 5 mA) Complementary to 2SJ105
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Toshiba Semiconductor
2SK330 PDF File
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