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FC117

Sanyo Semicon Device
Part Number FC117
Manufacturer Sanyo Semicon Device
Description PNP Transistor
Published Mar 30, 2005
Detailed Description Ordering number:EN3115 FC117 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Appli...
Datasheet PDF File FC117 PDF File

FC117
FC117

Overview
Ordering number:EN3115 FC117 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
· The FC117 is formed with two chips, being equivalent to the 2SA1753, placed in one package.
· Low collector to emitter saturation voltage.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions unit:mm 2067 [FC117] Electrical Connection E1:Emitter1 B1:Base1 C2:Collerctor2 E2:Emitter2 B2:Base2 C1:Collector1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC I CP IB PC PT Tj Tstg 1 unit Conditions Ratings –20 –15 –5 –500 –1 –100 200 300 150 –55 to+150 Unit V V V mA A mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Symbol ICBO IEBO hFE(1) hFE(2) hFE(small/ large) fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) VCB=–15V, IE=0 VEB=–4V, IC=0 VCE=–2V, IC=–10mA VCE=–2V, IC=–400mA VCE=–2V, IC=–10mA VCE=–2V, IC=–50mA VCE=–10V, f=1MHz IC=–5mA.
IB=–0.
5mA IC=–200mA.
IB=–10mA IC=–200mA.
IB=–10mA –20 –15 –5 160 70 0.
8 0.
98 400 6.
5 –15 –200 –0.
95 –35 –360 –1.
2 MHz pF mV mV V V V V Conditions Ratings min typ max –0.
1 –0.
1 560 Unit µA µA V(BR)CBO IC=–10µA, IE=0 V(BR)CEO IC=–1mA, RBE=∞ V(BR)EBO IE=–10µA, IC=0 Note: The specifications shown above are for each individual transistor.
Marking:117 SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, U...


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