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FDB2570

Fairchild Semiconductor
Part Number FDB2570
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDP2570/FDB2570 August 2001 FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSF...
Datasheet PDF File FDB2570 PDF File

FDB2570
FDB2570

Overview
FDP2570/FDB2570 August 2001 FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application.
Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features • 22 A, 150 V.
RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V • Low gate charge (40nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source...


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