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FDC645N

Fairchild Semiconductor
Part Number FDC645N
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDC645N April 2001 FDC645N N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed s...
Datasheet PDF File FDC645N PDF File

FDC645N
FDC645N

Overview
FDC645N April 2001 FDC645N N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Applications • DC/DC converter Features • 5.
5 A, 30 V.
RDS(ON) = 30 mΩ @ VGS = 4.
5 V RDS(ON) = 26 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • Low gate charge (13 nC typical) • High power and current handling capability S D D SuperSOT TM-6 G D D 1 6 2 5 3 4 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Maximum Power Dissipation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size .
645 FDC645N 7’’ Ratings 30 ±12 5.
5 20 1.
6 0.
8 -55 to +150 78 30 Tape width 8mm Units V V A W °C °C/W °C/W Quantity 3000 units 2000 Fairchild Semiconductor Corporation FDC645N Rev C(W) FDC645N Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 22 IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V V mV/°C 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient RDS(on) Static Drai...


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