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FDC653N

Fairchild Semiconductor
Part Number FDC653N
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description November 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel enhancement...
Datasheet PDF File FDC653N PDF File

FDC653N
FDC653N

Overview
November 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features 5 A, 30 V.
RDS(ON) = 0.
035 Ω @ VGS = 10 V RDS(ON) = 0.
055 Ω @ VGS = 4.
5 V.
Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 3 .
65 G pin 1 2 5 D D SuperSOT TM ...


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