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FDN306P

Fairchild Semiconductor
Part Number FDN306P
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDN306P December 2001 FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V spe...
Datasheet PDF File FDN306P PDF File

FDN306P
FDN306P

Overview
FDN306P December 2001 FDN306P P-Channel 1.
8V Specified PowerTrench MOSFET General Description This P-Channel 1.
8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management applications.
Features • –2.
6 A, –12 V.
RDS(ON) = 40 mΩ @ VGS = –4.
5 V RDS(ON) = 50 mΩ @ VGS = –2.
5 V RDS(ON) = 80 mΩ @ VGS = –1.
8 V Applications • Battery management • Load switch • Battery protection • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D D S SuperSOT -3 TM G TA=25oC unless otherwise no...


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