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FDN308P

Fairchild Semiconductor
Part Number FDN308P
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDN308P February 2001 FDN308P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V spe...
Datasheet PDF File FDN308P PDF File

FDN308P
FDN308P

Overview
FDN308P February 2001 FDN308P P-Channel 2.
5V Specified PowerTrench MOSFET General Description This P-Channel 2.
5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process.
It has been optimized for power management applications with a wide range of gate drive voltage (2.
5V – 12V).
Features • –20 V, –1.
5 A.
RDS(ON) = 125 mΩ @ VGS = –4.
5 V RDS(ON) = 190 mΩ @ VGS = –2.
5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint Applications • Power management • Load switch • Battery protection D D S G S SuperSOT -3 ...


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