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FDR8305N

Fairchild Semiconductor
Part Number FDR8305N
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FD8305N November 1999 FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description These N-Channel 2...
Datasheet PDF File FDR8305N PDF File

FDR8305N
FDR8305N

Overview
FD8305N November 1999 FDR8305N Dual N-Channel 2.
5V Specified PowerTrench MOSFET General Description These N-Channel 2.
5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features • 4.
5 A, 20 V.
RDS(ON) = 0.
022 Ω @ VGS = 4.
5 V RDS(ON) = 0.
028 Ω @ VGS = 2.
5 V.
• • • • Low gate charge (16.
2nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
Small footprint (38% smaller than a standard SO-8);low profile package (1 mm thick); power handling capability similar to SO-8.
Applications • • • Load switch Motor driving Power Management D2 D1 D1 D2 5 6 S2 4 3 2 1 7 8 SuperSOT -8 TM G1 S1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings 20 ±8 (Note 1a) Units V V A W °C 4.
5 20 0.
8 -55 to +150 Power Dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 1a) Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 156 40 °C/W °C/W Package Marking and Ordering Information Device Marking .
8305 Device FDR8305N Reel Size 13’’ Tape Width 12mm Quantity 3000 units 1999 Fairchild Semiconductor Corporation FD8305N Rev.
C FD8305N Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V Min 20 Typ Max Units V Off Chara...


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