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FDW2501N

Fairchild Semiconductor
Part Number FDW2501N
Manufacturer Fairchild Semiconductor
Description Dual N-Channel 2.5V Specified PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDW2501N May 2000 PRELIMINARY FDW2501N Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This N-Ch...
Datasheet PDF File FDW2501N PDF File

FDW2501N
FDW2501N

Overview
FDW2501N May 2000 PRELIMINARY FDW2501N Dual N-Channel 2.
5V Specified PowerTrench® MOSFET General Description This N-Channel 2.
5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.
It has been optimized for power management applications with a wide range of gate drive voltage (2.
5V – 12V).
Features • 6 A, 20 V.
RDS(ON) = 0.
018 Ω @ VGS = 4.
5V RDS(ON) = 0.
028 Ω @ VGS = 2.
5V • Extended VGSS range (±12V) for battery applications.
• High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package Applications • Load switch • Motor drive • DC/DC conversion • Power management 1 2 3 4 8 7 6 5 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA =25 oC unless otherwise noted Parameter Ratings 20 ±12 (Note 1a) Units V V A W °C 6 30 1.
0 0.
6 -55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJ A Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 125 208 °C/W Package Marking and Ordering Information Device Marking 2501N Device FDW2501N Reel Size 13’’ Tape width 12mm Quantity 3000 units © 2000 Fairchild Semiconductor Corporation FDW2501N Rev C1(W) FDW2501N Electrical Characteristics Symbol BVDSS ∆BVDSS ∆ TJ IDSS IGSSF IGSSR T A = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25° C VDS = 16 V, VGS = 12 V, VGS = –12 V, VGS = 0 V VDS = 0 V VDS = 0 V Min 20 Typ Max Units V Off Characteristics 14 1 100 –100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆ TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current...


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