DatasheetsPDF.com

FDW2502P

Fairchild Semiconductor
Part Number FDW2502P
Manufacturer Fairchild Semiconductor
Description Dual P-Channel 2.5V Specified PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDW2502P May 2000 PRELIMINARY FDW2502P Dual P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Ch...
Datasheet PDF File FDW2502P PDF File

FDW2502P
FDW2502P

Overview
FDW2502P May 2000 PRELIMINARY FDW2502P Dual P-Channel 2.
5V Specified PowerTrench® MOSFET General Description This P-Channel 2.
5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process.
It has been optimized for power management applications with a wide range of gate drive voltage (2.
5V –12V).
Features • –4.
4 A, –20 V.
RDS(ON) = 0.
035 Ω @ VGS = –4.
5 V RDS(ON) = 0.
057 Ω @ VGS = –2.
5 V.
• Extended VGSS range (±12V) for battery applications.
• High performance trench technology for extremely low RDS(ON) .
• Low profile TSSOP-8 package.
Applications • Load switch • Motor drive • DC/DC conversion • Power management G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA =25 oC unless otherwise noted Parameter Ratings –20 ±12 (Note 1a) Units V V A W °C –4.
4 –30 1.
0 0.
6 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJ A Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 125 208 °C/W Package Marking and Ordering Information Device Marking 2502P © 2000 Fairchild Semiconductor Corporation Device FDW2502P Reel Size 13’’ Tape width 12mm Quantity 3000 units FDW2502P Rev.
C1 (W) FDW2502P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆ TJ IDSS IGSSF IGSSR T A = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25 °C VDS = –16 V, VGS = –12 V, VGS = 12 V VGS = 0 V VDS = 0 V VDS = 0 V Min –20 Typ Max Units V Off Characteristics –17 –1 –100 100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆ TJ RDS(on) Gate Threshold Voltage Gate Threshold...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)