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FQA9N90

Fairchild Semiconductor
Part Number FQA9N90
Manufacturer Fairchild Semiconductor
Description 900V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQA9N90 March 2001 QFET FQA9N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field...
Datasheet PDF File FQA9N90 PDF File

FQA9N90
FQA9N90

Overview
FQA9N90 March 2001 QFET FQA9N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
TM Features • • • • • • 8.
6A, 900V, RDS(on) = 1.
3Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA9N90 900 8.
6 5.
45 34.
...


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