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FQB2N80

Part Number	FQB2N80
Manufacturer	Fairchild Semiconductor
Description	800V N-Channel MOSFET
Published	Apr 1, 2005
Detailed Description	FQB2N80 / FQI2N80 September 2000 QFET FQB2N80 / FQI2N80 800V N-Channel MOSFET General Description These N-Channel enha...
Datasheet	FQB2N80 PDF File

Overview

FQB2N80 / FQI2N80 September 2000 QFET FQB2N80 / FQI2N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM Features • • • • • • 2.
4A, 800V, RDS(on) = 6.
3Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 5.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capabilit...

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