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FQB6N45

Part Number	FQB6N45
Manufacturer	Fairchild Semiconductor
Description	450V N-Channel MOSFET
Published	Apr 1, 2005
Detailed Description	FQB6N45 / FQI6N45 January 2001 QFET FQB6N45 / FQI6N45 450V N-Channel MOSFET General Description These N-Channel enhanc...
Datasheet	FQB6N45 PDF File

Overview

FQB6N45 / FQI6N45 January 2001 QFET FQB6N45 / FQI6N45 450V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.
TM Features • • • • • • 6.
2A, 450V, RDS(on) = 1.
1Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 11 pF) Fast switching 100...

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