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FQD2N60C

Fairchild Semiconductor
Part Number FQD2N60C
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQD2N60C / FQU2N60C N-Channel QFET® MOSFET April 2013 FQD2N60C / FQU2N60C 600 V, 1.9 A, 4.7 Ω Features • 1.9 A, 600 V,...
Datasheet PDF File FQD2N60C PDF File

FQD2N60C
FQD2N60C

Overview
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET April 2013 FQD2N60C / FQU2N60C 600 V, 1.
9 A, 4.
7 Ω Features • 1.
9 A, 600 V, RDS(on) = 4.
7 Ω (Max.
) @ VGS = 10 V, ID = 0.
95 A • Low Gate Charge (Typ.
8.
5 nC) • Low Crss (Typ.
4.
3 pF) • 100% Avalanche Tested • RoHS Compliant N-Channel QFET® MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor corr...


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