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FQD3P50

Fairchild Semiconductor
Part Number FQD3P50
Manufacturer Fairchild Semiconductor
Description 500V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQD3P50 / FQU3P50 FQD3P50 / FQU3P50 500V P-Channel MOSFET January 2009 QFET® General Description These P-Channel enha...
Datasheet PDF File FQD3P50 PDF File

FQD3P50
FQD3P50

Overview
FQD3P50 / FQU3P50 FQD3P50 / FQU3P50 500V P-Channel MOSFET January 2009 QFET® General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for electronic lamp ballast based on complimentary half bridge.
D GS D-PAK FQD Series GDS Features • -2.
1A, -500V, RDS(on) = 4.
9Ω @VGS = -10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 9.
5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant I-PAK FQU Series G! S ! ● ● ▶▲ ● ! D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) - Derate above 25°C (Note 3) Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) ©2009 Fairchild Semiconductor Internati FQD3P50 / FQU3P50 -500 -2.
1 -1.
33 -8.
4 ± 30 250 -2.
1 5.
0 -4.
5 2.
5 50 0.
4 -55 to +150 300 Typ Max -- 2.
5 -- 50 -- 110 Units V A A A V mJ A mJ V/ns W W W/°C °C °C Units °C/W °C/W °C/W Rev.
A2, January 2009 FQD3P50 / FQU3P50 Elerical Characteristics Symbol Parameter TC = 25°C unless oth...


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