DatasheetsPDF.com

FQI4P25

Fairchild Semiconductor
Part Number FQI4P25
Manufacturer Fairchild Semiconductor
Description 250V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB4P25 / FQI4P25 December 2000 QFET FQB4P25 / FQI4P25 250V P-Channel MOSFET General Description These P-Channel enhan...
Datasheet PDF File FQI4P25 PDF File

FQI4P25
FQI4P25


Overview
FQB4P25 / FQI4P25 December 2000 QFET FQB4P25 / FQI4P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.
These devices are well suited for high efficiency switching DC/DC converters.
TM Features • • • • • • -4.
0A, -250V, RDS(on) = 2.
1Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 10.
3 pF) Fast switching 100% avalanche tested Improved dv/dt capabil...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)