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FQI7N60

Fairchild Semiconductor
Part Number FQI7N60
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET May 2014 FQB7N60 / FQI7N60 N-Channel QFET® MOSFET 600 V, 7.4 A, 1.0 Ω Desc...
Datasheet PDF File FQI7N60 PDF File

FQI7N60
FQI7N60

Overview
FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET May 2014 FQB7N60 / FQI7N60 N-Channel QFET® MOSFET 600 V, 7.
4 A, 1.
0 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features • 7.
4 A, 600 V, RDS(on) = 1.
0 Ω (Max.
) @VGS = 10 V, ID = 3.
7 A • Low Gate Charge (Typ.
29 nC) • Low Crss (Typ.
16 pF) • 100% Avalanche Tested D D G S D2-PAK GDS I2-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Ga...


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