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4AC14

Hitachi Semiconductor
Part Number 4AC14
Manufacturer Hitachi Semiconductor
Description Silicon NPN Triple Diffused
Published Apr 1, 2005
Detailed Description 4AC14 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline SP-10 3 2 4 ID ID 9 8 ID 1, 10 Emi...
Datasheet PDF File 4AC14 PDF File

4AC14
4AC14

Overview
4AC14 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline SP-10 3 2 4 ID ID 9 8 ID 1, 10 Emitter 2, 4, 6, 8 Base 3, 5, 7, 9 Collector ID 10 5 1 1 7 10 6 4AC14 Absolute Maximum Ratings (for each device, Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Diode current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) ID PC * 1 1 Ratings 150 150 7 5 10 5 4 28 150 –55 to +150 Unit V V V A A A W °C °C PC * (TC = 25°C) Junction temperature Storage temperature Note: 1.
4 devices operation.
Tj Tstg Electrical Characteristics (for each device, Ta = 25°C) Item Symbol Min 150 150 7 — — 1000 — — — Typ — — — — — — — — — Max — — — 10 10 20000 1.
5 2.
0 3.
5 V V V Unit V V V µA Test conditions I C = 0.
1 mA, IE = 0 I C = 0.
2 A, L = 20 mHz, RBE = ∞ I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 120 V, RBE = ∞ VCE = 3 V, IC = 3 A*1 I C = 3 A, IB = 6 mA*1 I C = 3 A, IB = 6 mA*1 ID = 5 A Collector to emitter breakdown V(BR)CBO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(SUS) V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward current Note: 1.
Pulse test.
hFE VCE(sat) VBE(sat) VD 2 4AC14 Maximum Collector Dissipation Curve 6 Collector power dissipation Pc (W) 4 device operation Maximum Collector Dissipation Curve Collector power dissipation Pc (W) 3 device operation 4 2 device operation 1 device operation 2 30 4 device operation 3 device operation 20 2 device operation 10 0 50 100 Ambient temperature Ta (°C) 150 1 device operation 0 50 100 Case temperature TC (°C) 150 Note: Collector power dissipation of each devices is identical.
Area of Safe Operation 100 iC (peak) 10 PW s s 1m 0m =1 Typical Output Characteristics 5 4.
5 4 3.
5 3 2.
5 Collector current IC (A) Collector current IC (A) 4 2 1.
5...


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