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4AK19

Part Number	4AK19
Manufacturer	Hitachi Semiconductor
Description	Silicon N Channel MOS FET High Speed Power Switching
Published	Apr 1, 2005
Detailed Description	4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st. Edition February 1999 Features • Low on...
Datasheet	4AK19 PDF File

Overview

4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st.
Edition February 1999 Features • Low on-resistance N Channel: R DS(on) ≤ 0.
5 Ω, VGS = 10 V, ID = 2.
5 A R DS(on) ≤ 0.
6 Ω, VGS = 4 V, ID = 2.
5 A • 4 V gate drive devices.
• High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10.
Source 2, 4, 6, 8.
Gate 3, 5, 7, 9.
Drain 4AK19 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
4 device...

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