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4AK23

Hitachi Semiconductor

Silicon N-Channel Power MOS FET Array


Description
4AK23 Silicon N-Channel Power MOS FET Array Application High speed power switching Features Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A Low drive current High speed switching High density mounting Suitable for H-bridged motor driver Outline SP-12TA 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 12 3 4 5 6 7 8 9 10 1112 S 3 S...



Hitachi Semiconductor

4AK23

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