4AK26
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.075 , VGS = 4 V, I D = 5 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for motor driver and solenoid driver and lamp driver
Outlin...
