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4AM11

Hitachi Semiconductor
Part Number 4AM11
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel/P-Channel Power MOS FET Array
Published Apr 1, 2005
Detailed Description 4AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resista...
Datasheet PDF File 4AM11 PDF File

4AM11
4AM11

Overview
4AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.
17 Ω, VGS = 10 V, ID = 2.
5 A P-channel: RDS(on) ≤ 0.
2 Ω, VGS = –10 V, ID = –2.
5 A • • • • • Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driver 4AM11 Outline Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Rating Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
4 Devices operation S...


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