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2SC4667

Part Number	2SC4667
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN TRANSISTOR
Published	Apr 3, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4667 Ultra High Speed Switching Applications Computer, Co...
Datasheet	2SC4667 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4667 Ultra High Speed Switching Applications Computer, Counter Applications 2SC4667 Unit: mm • High transition frequency: fT = 400 MHz (typ.
) • Low saturation voltage: VCE (sat) = 0.
3 V (max) • High speed switching time: tstg = 15 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage Emitter-base voltage Collector current Base current VCEO VEBO IC IB 15 V 5V 200 mA 40 mA Collector power dissipation Junction temperature Storage temperature range PC 100 mW Tj 125 °C Tstg −55~125 °C JEDEC JEITA ― SC-70 Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-2E1A temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the Weight: 0.
006 g (typ.
) reliability significantly even if the operating conditions (i.
e.
operating temperature/c...

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