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2SD1160

Part Number	2SD1160
Manufacturer	Toshiba Semiconductor
Description	NPN TRANSISTOR
Published	Apr 3, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1160 Switching Applications Suitable for Motor Drive Appl...
Datasheet	2SD1160 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1160 Switching Applications Suitable for Motor Drive Applications 2SD1160 Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.
6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current DC IC 2 A Pulse ICP 4 Diode forward surge current (t = 1 s) IFP 1A Collector power dissipation Ta = 25°C Tc = 25°C PC 1 W 10 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEIT...

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