Silicon N-Channel/P-Channel Complementary Power MOS FET Array
Description
6AM13
Silicon N-Channel/P-Channel Complementary Power MOS FET Array
ADE-208-1217 (Z) 1st. Edition Mar. 2001 Application
High speed power switching
Features
Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –5 A Capable of 4 V gate drive Low drive current High speed switching High d...
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