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KSB1151

Fairchild Semiconductor
Part Number KSB1151
Manufacturer Fairchild Semiconductor
Description PNP Epitaxial Silicon Transistor
Published Apr 5, 2005
Detailed Description KSB1151 KSB1151 Feature • Low Collector-Emitter Saturation Voltage • Large Collector Current • High Power Dissipation ...
Datasheet PDF File KSB1151 PDF File

KSB1151
KSB1151

Overview
KSB1151 KSB1151 Feature • Low Collector-Emitter Saturation Voltage • Large Collector Current • High Power Dissipation : PC=1.
3W (Ta=25°C) • Complement to KSD 1691 1 TO-126 1.
Emitter 2.
Collector 3.
Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP *Collector Current (Pulse) IB Base Current PC Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) TJ Junction Temperature TSTG Storage Temperature * PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition ICBO Collector Cut-off Current IEBO Emitter Cut-off Current hFE1 hFE2 hFE3 * DC Current Gain VCE(sat) * Collector-Emitter Saturation Voltage VBE(sat) * Base-Emitter Saturation Voltage tON Turn On Time tSTG Storage Time tF Fall Time * Pulse test: PW≤350µs, Duty Cycle≤2% Pulsed VCB = - 50V, IE = 0 VEB = - 7V, IC = 0 VCE = - 1V, IC = - 0.
1A VCE = - 1V, IC = - 2A VCE = - 2V, IC = - 5A IC = - 2A, IB = - 0.
2A IC = - 2A, IB = - 0.
2A VCC = - 10V, IC = - 2A IB1 = - IB2 =0.
2A RL = 5Ω hFE Classification Classification hFE2 O 100 ~ 200 Y 160 ~ 320 Value - 60 - 60 -7 -5 -8 -1 1.
3 20 150 - 55 ~ 150 Units V V V A A A W W °C °C Min.
60 100 50 Typ.
200 - 0.
14 - 0.
9 0.
15 0.
78 0.
18 Max.
- 10 - 10 400 - 0.
3 - 1.
2 1 2.
5 1 Units µA µA V V µs µs µs G 200 ~ 400 ©2003 Fairchild Semiconductor Corporation Rev.
B, May 2003 KSB1151 Typical Characteristics IC[A], COLLECTOR CURRENT VCEO(SUS ) dT[%], Ic DERATING IC[A], COLLECTOR CURRENT -10 -200mA -150mA -8 I B I B = = IB = -100mA IB = -80mA IB = -60mA -6 IB IB = = -40mA -30mA -4 IB = -20mA I = -10mA B -2 I =0 B -0 -0.
4 -0.
8 -1.
2 -1.
6 -2.
0 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1.
Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 IC = 10 IB -1 VBE(sat)...


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