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IXBH10N170

IXYS Corporation
Part Number IXBH10N170
Manufacturer IXYS Corporation
Description High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Published Apr 5, 2005
Detailed Description www.DataSheet4U.com High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCE...
Datasheet PDF File IXBH10N170 PDF File

IXBH10N170
IXBH10N170

Overview
www.
DataSheet4U.
com High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCES = 1700 V IC25 = 20 A VCE(sat) = 3.
8 V Preliminary Data Sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load TC = 25°C Maximum Ratings 1700 1700 ±20 ±30 20 10 40 ICM = 20 V CES = 1350 140 -55 .
.
.
+150 150 -55 .
.
.
+150 300 260 V V V V A A A A V W °C °C °C °C °C TO-268 (IXBT) G E (TAB) TO-247 AD (IXBH) G C (TAB) C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features z z Maximum Lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 AD TO-268 1.
13/10Nm/lb.
in.
6 4 g g z z z High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low conduction losses High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
1700 0.
10 3.
0 - 0.
24 TJ = 25°C TJ = 125°C V %/K 5.
0 V %/K 10 100 ±100 TJ = 125°C 3.
4 4.
1 3.
8 µA µA nA V V Applications z z z BVCES VGE(th) ICES IGES VCE(sat) IC = 250 µA, VGE = 0 V Temperature Coefficent IC = 250 µA, VCE = VGE Temperature Coefficent VCE = 0.
8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V z AC motor speed control Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Capacitor discharge circuits Advantages z z z High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) © 2003 IXYS All rights reserved DS99048(05/03) IXBH 10N170 IXBT 10N170 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwi...


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